PART |
Description |
Maker |
HFM203-BS |
Chip High Effciency Rectifiers
|
Formosa MS
|
MURA260BG MURA2100BG MURA210BG MURA220BG |
(MURA205BG - MURA2100BG) 2.0A Surface Mount High Effciency Rectifiers
|
American First Semiconductor
|
EF1040FCT EF1060FCT |
Effciency Fast Rectifiers
|
Formosa MS
|
PD8931 PD8001 |
High quantum effciency, Very small dark current, High speed response
|
Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
SS12-120 |
Low power loss, high effciency
|
Bruckewell Technology L...
|
BD8301MUV-E2 BD8301MUV |
High-effciency Step-up/down Switching Regulator with Built-in Power MOSFET
|
Rohm
|
UF3A-UF3M HS3A-HS3M UF3A |
SURFACE MOUNT HIGH EFFICIENCY (ULTRA FAST) GLASS PASSIVATED RECTIFIERS Glass High Efficiency Rectifiers Glass Ultrafast Recovery Rectifiers
|
HY ELECTRONIC CORP.
|
UF4001-UF4008 HER101-HER108 UF4005 UF4004 UF4001 U |
HIGH EFFICIENCY (ULTRA FAST) RECTIFIERS Ultrafast Recovery Rectifiers High Efficiency Rectifiers
|
HY ELECTRONIC CORP.
|
RC0805JR-07 RC1206JR-07 RC0805JR-07100ML RC1206KR- |
HIGH OHMIC CHIP RESISTORS HIGH OHMIC CHIP RESISTORS RC high ohmic series HIGH OHMIC CHIP RESISTORS RC high ohmic series 20%, 10%, 5% sizes 0805/1206 RoHS compliant
|
YAGEO Corporation
|
UGB6124AG UGB3132AD UGD8124AG UGD6123AG |
High Voltage rectifiers Hochspannungs-gleichrichter Thyristor and Rectifiers Modules: High Voltage Rectifier Modules High Voltage rectifiers Hochspannungs-gleichrichter 1 A, 10500 V, SILICON, BRIDGE RECTIFIER DIODE
|
IXYS Corporation IXYS, Corp.
|
VFC1206RABT VFC1206RABW VFC1206RBBT VFC1206RCBT VF |
High Precision Flip Chip, Patents Pending (Industrialized Countries) High Precision Flip Chip Patents Pending (Industrialized Countries) Discrete High Precision Flip Chip Resistor High-Flex Round Conductor Flat Cable; Number of Conductors:10; Pitch Spacing:0.05"; Conductor Size AWG:28; No. Strands x Strand Size:19 x 40; Approval Bodies:UR RoHS Compliant: Yes
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
CW201212-R33J CW201212-12NJ CW201212-R56J CW201212 |
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.012 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.91 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD Inductor; Inductor Type:High Frequency; Inductance:13.3nH; Inductance Tolerance: /- 5 %; Current Rating:600mA; Series:CW201212; Package/Case:0805; Core Material:Alumina Ceramic; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Bourns, Inc. BOURNS INC
|